Influence of gallium surface saturation on GaN nanowire polytype selection during molecular-beam epitaxy

Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

Gallium Ga surface desorption behavior was investigated using reflection high-energy electron diffraction during the GaN growth. It was found that the desorption of Ga atoms from the 0001 GaN surfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0...

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

Effects of hydrogen during molecular beam epitaxy of GaN

Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

Ga Adlayer Coverage and Surface Morphology Evolution during GaN Growth by Plasma-assisted Molecular Beam Epitaxy

Ga adlayer coverage and surface morphology evolution during GaN grown by PAMBE are studied on an atomic scale. Ga adlayer coverage, which is closely dependent on the Ga/N flux ratios, is found to be a very important factor in determining the surface morphology. A laterally contracted Ga bilayer is able to stabilize the GaN surface to produce the minimum pit density. Such an energetically favora...